The New 1200V CoolSiC Schottky Diode Generation 5: For a New Level of System Efficiency and Reliability
The new 1200V CoolSiC Schottky Diode Generation 5 complete portfolio has now been released. Forward currents up to 40A in TO-247, 20A in TO-220 and 10A in DPAK target solar inverters, UPS, 3-phase SMPS, energy storage and motor drives applications.
With Generation 5, reduction of forward voltage and its temperature dependency leads to a new level of system efficiency.
Moreover, an improved thermal performance compared to a silicon based solution increases system reliability as well as the possibility to increase output power in a given form factor. Combined with Infineon’s 1200V Si HighSpeed 3 IGBT, it delivers 40% lower Si IGBT turn-on losses and reduced EMI.
Attend this webinar to learn about:
- Target applications for 1200V SiC Schottky Diodes
- New features and benefits of 1200V CoolSiC Schottky Diode Generation 5
- Portfolio mapping across target applications
- Design-in guidelines for SiC versus Si diodes
- Infineon’s support material offering
Who should attend:
Application Engineers, Product Marketing, Sales Managers, Technical Marketing, Purchasing
Fanny Björk, Product Marketing SiC, Industrial Power & Control
Omar Harmon, Application Engineering SiC, Industrial Power & Control
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