Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are transforming power electronics design across applications such as data centers, renewable energy, and automotive electronics. This 1-hour EE Times University Course will explain why and how this is happening, while providing designers with the knowledge necessary to make informed decisions on where and how WBG can play a role in current or upcoming designs.

Attendees will learn:

  • Show the differences between WBG and standard silicon structures
  • How to add WBG devices to standard topologies
  • Illustrate the use of WBG semiconductors in various applications
  • What’s next in GaN and SiC Technology


Paul Pickering, Consultant

Paul Pickering has over 35 years of engineering and marketing experience, including stints in automotive electronics, precision analog, power semiconductors, flight simulation, and robotics. Originally from the North-East of England, he has lived and worked in Europe, the US, and Japan. He has a B.Sc. (Hons) in Physics & Electronics from Royal Holloway College, University of London, and has done graduate work at Tulsa University.

Patrick Mannion, Consultant, ClariTek, LLC

Engineer and technology analyst, writer and content development strategist focused on the electronics industry. Makes strategic content and editorial decisions to help the engineering community stay informed and manages design risk through live and online channels and events. Combines electronics engineering education and experience to provide the latest educational curriculum for engineers.