Switch-mode power supplies continue to demand high efficiency and high power density, especially in server and data center applications, due to stringent efficiency requirements by 80 Plus, Energy Star 3.0, and European LOT 9 standards. The technology development and applications of Silicon Carbide devices have made them promising substitutions for traditional silicon devices in a variety of applications. Their superior switching speed, low switching loss, and low temperature dependency of RDS(on) mean that higher efficiency, higher power density, improved robustness and reliability can be achieved.

During this presentation, we will introduce Wolfspeed’s new C3M Silicon Carbide TO-Leadless (TOLL) MOSFETs and 3.6-kW Bridgeless Totem-Pole PFC reference design, offering a cost-effective thermal interface and the enablement of peak efficiency over 99% at 230-V input.

Attendees will learn about:

  • Silicon Carbide device and magnetic material selection in high-power and high-efficiency applications
  • Thermal management of Silicon Carbide power devices for high-power–density applications
  • Benefits of small-form–factor TOLL package with Silicon Carbide MOSFET technology