Wide band gap power devices (such as those
constructed from gallium nitride or silicon carbide) offer significant benefits
over power devices fabricated from silicon. The key benefits of wide band gap
power devices include: higher operating temperature, higher operating voltage,
higher operating frequencies and lower power loss (lower on resistance). These
features translate into the following advantages for solid-state power circuit

  • Improved conversion efficiency due to reduced switching and conduction loss,
    higher operating voltages and currents, and higher operating frequencies.
  • Lighter weight due to higher permissible operating temperatures and
    reductions in the required cooling system size.

However, while wide
bandgap devices offer many performance benefits they also present many
characterization challenges including:

  • Measurement of currents of >100 A
  • Measurement of voltages of >3,000 V
  • Accurate sub-milliohm on resistance measurement
  • Quantitative gallium nitride current collapse measurement
  • Junction capacitance measurement at thousands of volts of DC bias

In this webcast Agilent Technologies will explain new measurement
techniques, technologies and equipment that can meet the tough characterization
challenges presented by wide band gap high power semiconductor devices.

Who should attend:
Engineers, scientists and
researchers involved with the characterization and measurement of high-power
semiconductor devices (especially wide band gap materials such as gallium
nitride and silicon carbide) would benefit from attending this webcast.

Wadsworth, Market Development Manager, Agilent

Alan Wadsworth is the
North and South American Market Development Manager for Agilent’s semiconductor
test division. Alan holds bachelors and masters degrees in electrical
engineering from the Massachusetts Institute of Technology and an MBA from Santa
Clara University. Alan has over 25 years of experience in the semiconductor
industry in both design and test.