The trends in semiconductor technology toward smaller feature sizes and higher integration lead to a growing number of reliability issues whose characterization and mitigation is a fundamental part of technology development and product design. Device scaling is susceptible to degradation mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI), both of which have a significant impact on the operational margins and lifetime of the product. In 3D architectures, mechanical stress resulting from the through-silicon via (TSV) process presents both a reliability challenge and a source of device performance variability. TCAD simulation of reliability phenomena is increasingly important in semiconductor technology development as a way to provide insight into physics of the underlying degradation mechanisms and to guide process changes to improve reliability. 

This webinar provides an overview of the comprehensive capabilities in TCAD Sentaurus to model NBTI, HCI and TSV stress. Process and reliability engineers can use the simulation techniques described in this webinar to investigate failure mechanisms and to optimize their process technologies to meet their reliability targets. At the end of the presentation, attendees will have an opportunity to interact with Synopsys R&D and application engineers and ask questions specific to their needs. 

Who should attend: 
TCAD Engineers, Technology Development Engineers, Reliability Engineers, Failure Analysis Engineers, Process Integration Engineers, 3D Integration Engineers, TSV Technology Development Engineers and Managers 


Nelson Braga, CAE Manager, Synopsys TCAD
Xiaopeng Xu, R&D Manager, Synopsys TCAD
Ilya Rumyantsev, R&D Engineer, Synopsys TCAD