Introducing the latest Discretes IGBT Technology - matching tomorrow's High Efficiency demands in Solar, UPS, Welding and SMPS applications
Title: Introducing the latest IGBT Technology – matching tomorrow’s High Efficiency demands in Solar, UPS, Welding and SMPS applications
IGBTs are historically known for having long tail currents with focus on drive applications and anything switching up to 30 kHz was known as “High Speed”, where conduction losses were penalized to get switching losses down. In 2008, Infineon launched a ground breaking technology called the HighSpeed3, which is the highest efficiency IGBT capable of switching up to 100 kHz with a MOSFET-like turn-off switching behavior.
Today Infineon’s TRENCHSTOP™ 5 IGBT technology is capable of switching well beyond 100 kHz. The new products are optimized for PFC and PWM topologies in applications such as Photovoltaic Inverters, Uninterruptible Power Supplies (UPS), Inverterised Welding Machines and hard switching applications.
Attendees will learn:
- Features and Benefits of TRENCHSTOP™ 5 technology and Rapid 1 & 2 Diodes
- Target Applications
- Advantage of using a discrete solution
Basic knowledge in power electronics
Who should attend:
Application Engineers, Test Engineers, Product Managers, Regional Marketing, Marketing & Sales
Marlene Wuercher, Product Marketing Manager, Discretes IGBT and Diodes, Infineon Technologies
Marlene was born in Austria. After several years abroad in Brussels and New York City working as Product Marketing Manager she started at Infineon Technologies Austria about one year ago. Since then she is a Product Marketing Manager for Discretes IGBT and Diodes.
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