High efficiency Doherty amplifiers based on LDMOS technology for wireless infrastructure
NXP Semiconductors is the leading provider of world-class RF power LDMOS transistors that meet the growing demand for reduced power consumption in cellular transmitters. In this webinar, high efficiency Doherty reference designs will be presented, which address the stringent demands of high-data rate applications such as W-CDMA and WiMAX. Emerging standards such as LTE and Multicarrier GSM will also be reviewed. Moreover, the world's first fully integrated medium power Doherty transistors that effectively address the cost and size requirements of power amplifier manufacturers will be presented.
John Gajadharsing is RF Power Application Team Leader at NXP Semiconductors in the Netherlands and has over twenty years of R&D experience in RF power transistor technology and amplifier design for wireless infrastructure. His fields of expertise include advanced linearization techniques, high efficiency amplifier concepts and advanced system architectures for wireless communication. He is a member of the IEEE Microwave Theory and Techniques Society.
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