Silicon Carbide (SiC) power semiconductors are rapidly emerging into the commercial market delivering several benefits over conventional Silicon-based power semiconductors. SiC MOSFETs can improve overall system efficiency by more than 10% and the higher switching capability can reduce the overall system size and costs. The technical benefits coupled with lower costs have increased the fast adoption of SiC power semiconductors in applications like industrial motor control, induction heating and industrial power supplies and renewable energy.

Avago Technologies gate drive optocouplers are used extensively in driving Silicon-based semiconductors like IGBT and Power MOSFETs. Optocouplers are used to provide reinforced galvanic insulation between the control circuits from the high voltages and the power semiconductors. The ability to reject high common mode noise (CMR) will prevent erroneous driving of the power semiconductors during high frequency switching. This webinar will discuss how the next generation of gate drive optocouplers can be used to protect and drive SiC MOSFETs.

Jamshed Khan
Field Applications Engineer, Optocouplers and Fiber Optics, Avago