Exploiting the Benefits of Wide Bandgap SiC Devices in Advanced High-Power Applications
This one-hour webinar will feature a detailed explanation of Infineon CoolSiC™ Trench Gate Oxide structure and the corresponding advantages in terms of device robustness and performance.
Join us for an overview of how Infineon Technologies is investing in WBG technology to improve the price-performance ratio of power electronics through advancements in device technology and manufacturing capabilities. Attendees will also get an overview of the Infineon Portfolio of CoolSiC™ Devices.
- SiC trench gate topology provides higher performance without sacrificing reliability
- SiC provides multiple benefits compared to traditional power devices
- Balancing benefits and compromises when selecting SiC devices
- Criticality of package choice for full utilization of SiC’s benefits
- Unleashing new levels of efficiency AND performance AND robustness
- How SiC will change the landscape for designing robust, high power applications
Can’t attend the live event? We’ve got you covered! Register now, and we’ll send you a link to view the webinar on-demand after the live broadcast.
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