This paper presents next generation Silicon Carbide (SiC) planar MOSFETs, trench structure Schottky diodes, and trench MOSFETs. Developed SiC planar MOSFETs have suppressed the degradation of parasitic PN junction diodes even if forward current penetrates into the PN junction diodes. SiC Schottky diodes, with newly developed trench structures, successfully showed lower forward voltage than conventional SiC diodes while keeping leakage current at an acceptable level. Developed SiC MOSFETs with a double-trench structure have improved reliability of the device while maintaining ultra low on-resistance due to the fact that the new structure effectively reduced the highest electric field at the bottom of the gate trench, preventing gate oxide breakdown.