The PIXBAR OPC for Contact-Hole Pattern in sub-70-nm Generation
PIXBAR technology is the candidate which can help improve the process margin for random contact-holes. The PIXBAR technology lithography attempts to synthesize the input mask which leads to the desired output wafer pattern by inverting the forward model from mask to wafer. This paper will use the pixel-based mask representation, a continuous function formulation, and gradient-based interactive optimization techniques to solve the problem. The result of PIXBAR method helps gain improvement in process window with a short learning cycle in contact-hole pattern assist-feature testing.
Please disable any pop-up blockers for proper viewing of this Whitepaper.