A number of factors, including regulatory rules, market demands, and emerging new applications and markets, are driving the development of next-generation power semiconductor devices for use in increasingly integrated, robust ‘green’ power systems. Silicon carbide (SiC) is quickly emerging as the most viable alternative to silicon due to its wide bandgap properties and superior performance. Along with SiC Schottky barrier diodes (SBDs), ROHM offers SiC MOSFETs featuring higher breakdown voltage, lower ON resistance, and faster switching speeds over comparable silicon solutions, minimizing loss and heat generation for lower system cost, size, and weight.