Performing model based optical proximity correction (MB-OPC) is an essential step in the production of advanced integrated circuits manufactured with optical lithography technology. The accuracy of these models depends highly on the experimental data used in the model development process and on the appropriate selection of the model parameters. The optical and resist model parameters selected during model calibration have a significant impact on the OPC model accuracy, run time, and model stability. In order to avoid unpractical run times, a compromise between the run time and model accuracy has to be performed. The modeler has to optimize the necessary model parameters in order to find a good trade-off that achieves acceptable model accuracy with reasonable run time. In this paper, we investigate the effect of some selected optical and resist model parameters on the final OPC model accuracy, run time, and stability.

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