GaN and SiC wide band gap semiconductor technology has been used for the past 15 years mainly in RF high frequency applications, with its main contribution to system designs with significantly reduced losses. The popularity of GaN systems for RF is rapidly increasing; the RF GaN market is expected to grow at 22.9 % CAGR over 2017-2023, boosted by implementation of 5G networks.

AVX Corporation asked EPCI European Passive Components Institute to look at the use of tantalum capacitors on board of GaN power amplifiers and perform experimental test evaluation. This paper shares some tantalum capacitor design-in references linked with the recent GaN power system designs. Temperature stability from -30 °C to +70 °C of a typical GaN RF power amplifier with tantalum capacitor on board is also evaluated.