Study of Model Assisted Rule Base SRAF for Random Contact
This paper will evaluate model assisted rule base SRAF. Model assisted rule base SRAF combines the advantage of both model based SRAF and rule base SRAF to ensure high process margin without the mask making difficulty with stable wafer output. Model will assist in generating a common rule for rule based SRAF. Method to extract the rule from the models will first be discussed. Model assisted rule based SRAF will be applied to 3Xnm DRAM contact. Evaluation and analysis of the simulated and actual wafer result will be discussed.
Note: By clicking on the above link, this paper will be emailed to your EE Times log-in address by Mentor Graphics.
Please disable any pop-up blockers for proper viewing of this Whitepaper.