CMOS technology is one of the most promising choices for RF applications. Its highly integrated nature provides true RF system-on-chip integration. Silicon-on-insulator (SOI) CMOS offers specific additional design advantages that include a significant reduction in cross-talk between RF and digital circuits on the same die and easy integration of high quality passive elements. Basic RF building blocks through 6 GHz have been verified with a 0.35 µm production-ready SOI CMOS technology.

Originally published in the Microwave Journal, January 2002

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