This paper describes the sub half microns vertical MOSFET, developed for fabrication with low-cost processing. The transistor channel length is independent from photolithography technology, and can be built very inexpensively. A high-energy implant is used to form the lower source drain region with low resistivity. The drive current per unit channel width is higher than that of previously developed vertical MOSFETs. Fabrication processes are simple, and low-cost equipment of 2μm CMOS generation can be used to fabricate a 200-nm channel length MOSFET with strong electrical characteristics and high performance.