Passive Components for GaN Based Devices
The theoretical limits of Silicon-based device performance are fast approaching, and in some cases, already here. Therefore, IC (integrated circuit) design companies have turned their efforts into driving costs down while increasing performance of wide band gap semiconductors such as GaN (Gallium Nitride). GaN-based power and RF (Radio Frequency) devices are now available from multiple manufacturers at affordable prices as a result of those intensive efforts.
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