When deciding which process technology is the right fit for their 5G or IOT applications, RF designers can choose from compact fin field-effect transistor (finFET) technologies or fully-depleted silicon-on-insulator (FDSOI) technologies, both of which can meet performance and power requirements while keeping process costs, complexity, and footprint low. These process technologies allow designers to integrate a wide spectrum of devices (e.g., high-performing RF/mmWave transistors with logic devices) to address a variety of market segments, including mobile, IoT, analog, and RF/mmWave.

This paper focuses on the design and parasitic extraction (PEX) challenges of capacitors in RF design applications, and proposes best practices to solve those challenges, illustrated by experimental results.