MRAM combines a magnetic device with standard silicon-based microelectronics to obtain the combined attributes of non-volatility, high-speed operation and unlimited read and write endurance not found in any other existing memory technology. In this paper we provide an overview of Freescale’s MRAM technology and describe the MR2A16A, a 4 Mbit MRAM device. We describe how the cell architecture, bit structure, and the toggle switching mode are combined to provide significantly improved operational performance and manufacturability as compared to MRAM based on conventional switching.