Modeling and Verification of a Radio Frequency Matching Network for Semiconductor Processing Equipment
Modeling a plasma and an automatic matching network can help in the optimization of the matching network and the etching process. A model can provide insights into the efficiency of a network and account for power losses. This information allows process engineers to compensate for the losses and thus to obtain a more stable matching network.
This paper shows how to derive a mathematical model of a matching network and account for the power losses. Such a model is used on a program, such as Mathcad.
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