Conventional site-base model calibration approaches have worked fine from the 180nm down to the 65nm technology nodes, but with the first 45nm technology nodes rapidly approaching, site-based model calibration techniques may not capture the details contained in these 2D-intensive designs. This paper documents the issues of the site-base model calibration technique at the 45nm technology node and beyond. It also demonstrates the improvement in model accuracy for critical gate regions over the traditional modeling technique, and it shows the best know methods to achieve the utmost accuracy. Lastly, this paper shows how SEM-based modeling quantifies modeling error in these complex 2D regions.

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