The continuous reduction of device dimensions and densities of integrated circuits increases the demand for accurate process window models used in optical proximity correction. Beam focus and dose are process parameters that have significant contribution to the overall critical feature dimension error budget. The increased number of process conditions adds to the model calibration time since a new optical model needs to be generated for each focus condition. This study shows how several techniques can reduce the calibration time by appropriate selection of process conditions and features while maintaining good accuracy.
Note: By clicking on the above link, this paper will be emailed to your EE Times log-in address by Mentor Graphics.