Integrated, silicon-based electronic circuits are becoming increasingly fast and complex. In the foreseeable future, this will lead to an interconnection bottleneck in regard to pin count and speed. This paper discusses the solution presented by optoelectronic interfaces.

In order to realize this solution, a combination of III/V-optoelectronic devices with Si-electronics is required. In comparison to hybrid integration methods, a monolithic approach is more advanced. However, crystal defects due to lattice-mismatch degrade the devices’ peformance. Nonetheless, this paper aims to show that a monolithic integrated optoelectronic interface is possible.