Insulated gate bipolar transistors (IGBT) combine the fast switching capability of MOSFETs with the high current handling of bipolar junction transistors (BJT). The devices are used in high-current, high-voltage applications where switching speed is important. This application note explores the performance features of IGBTs, including switching behavior, power dissipation, and IGBT gate driver IC power loss. In addition, IGBT gate drive requirements, LED drive considerations, and IGBT/MOSFET driver design considerations are explored, and Vishay IGBT driver application examples are provided.