Insulated gate bipolar transistors (IGBTs) are frequently used in induction heating applications, though a considerable amount of power is dissipated when operated at high power levels, requiring the addition of large heat sinks to lower IGBT junction temperatures. This application note presents IGBTs optimized with Field Stop technology, which achieve lower saturation voltages and reduce conduction losses and turn-on/turn-off inefficiencies, making these IGBTs ideal for use in switching induction heating applications.