GaN-Based Primary-Side Power Switches Extend the Power Range of InnoSwitch™3 IC Families
The technology used in the PowiGaN-based InnoSwitch3, InnoSwitch3-Pro and LYTSwitch-6 is effective, reliable and easy to use. As a material for power semiconductors, GaN enables devices that behave much closer to an “ideal switch” than contemporary Silicon. With the exceptional performance results of PowiGaN-based devices, the technology will be increasingly utilized in PI device-families moving forward.
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