The introduction of EUV lithography into the semiconductor fabrication process will enable a continuation of Moore’s law below the 22 nm technology node. EUV lithography will, however, introduce new and unwanted sources of patterning distortions which must be accurately modeled and corrected on the reticle. Flare caused by scattered light in the projection optics is expected to result in several nanometers of on-wafer dimensional variation, if left uncorrected. This paper focuses on the development of an all model-based approach to compensation of both flare and proximity effects in EUV lithography. The advantages of such an approach in terms of both model and OPC accuracy will be discussed.

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