Shrinking geometries and increasing design size of the nanometer era has enabled greater functionality on a single chip. But with it comes new complexities that create many more problems for attaining design closure. Unintentional parasitic effects produced by non-standard inductors, interconnect, vias, diffusion and in-die variations can cause chip failure if not accurately measured, extracted, analyzed and modeled. To meet the demands of nanometer designs—and realize yield—a comprehensive approach to device and parasitic extraction must be implemented in order to gain accurate silicon modeling.

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