GaN devices offer significant improvements in broadband performance, resulting in design engineers increasingly turning to this technology for their next generation designs. This document discusses fundamental broadband design issues from both the theoretical and practical standpoints and compares GaN HEMT to GaAs FET and Si LDMOS technologies to show the advantages of each in broadband applications. A broadband GaN design example is presented to show results that can be expected from Nitronex’s current generation of devices.