Breakdown and Leakage Current Measurements on High Voltage Semiconductor Devices
Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices are becoming more viable. GaN, with its super high-power density, is found in medium-to-low power applications such data-center power, wireless power, consumer power supplies, automotive, and military/government power electronics. SiC, because it can drive high power at high voltages, is being applied in high power applications such as those found in motor drives in automobiles, locomotives, and PV inverters.
This application note describes how to test new silicon carbide and gallium nitride high voltage, high power semiconductor devices, taking into consideration test system safety, wide voltage range, and accurate current measurement.
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