Contour-based OPC-modeling is imperative in the next generation lithography, as reported in SPIE2010. In this study, Mask SEM-contours were input into OPC model calibration in order to verify the impact of mask pattern shape on the quality of the OPC model. Advanced SEM contouring technology was applied to both of Wafer CD-SEM and Mask CD-SEM in examining the effectiveness of OPC model calibration. The evaluation results of the model quality will be reported. The advantage of Contour based OPC modeling using Wafer SEM-Contour and Mask SEM-Contour in the next generation computational lithography will be discussed.

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