3-A, 600-V IGBT debuts in tiny DPAK

LEXINGTON, MASS. — STMicroelectronics Inc. has begun offering a 3-amp, 600-V insulated-gate bipolar transistor (IGBT) that combines 1.1-V on-voltage drop (Vcesat), a 18-nC gate charge and integrated freewheeling diode in a compact DPAK form fac