How to Design a High Performance Gate Drive Circuit using SiC MOSFETs
For high-voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate-drive design for maximizing SiC switching performance will be described. System level considerations such as start-up, fault protection and steady state switching will also be discussed.