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GaN High Power Amplifiers Replace TWTs in Radar Applications

Authored on: Jun 29, 2015

Technical Paper

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Traditionally, power amplifiers using Traveling Wave Tubes (TWTs) were the only practical technology for high power radar systems. TWT amplifiers require high voltage, have limited ruggedness, and experience performance declines over their operating lifetime. Today's radar systems need enhanced reliability, ruggedness and reduced size, as well as performance demands that require solid state replacement of older tube technologies. Cree's 50V GaN HEMT internally-matched transistors deliver high power density, reliability, efficiency, high gain and proven performance for significantly smaller and lighter multi-kilowatt amplifiers for radar systems from L-Band through C-Band (330 – 675W), and X-Band (80 to 145W) frequencies.

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