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I3T80: A 0.35 µm Based System-on-Chip Technology for 42V Battery Automotive Applications

Authored on: Jan 10, 2003 by P. Moens, D. Bolognesi, L. Delobel, D. Villanueva, H. Hakim, S.C. Trinh, K. Reynders, F. De Pestel, A. Lowe, E. De Backer, G. Van Herzeele, and M. Tack

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This paper introduces a new modular 0.35 µm based smart power technology which is compatible with the new 42V battery automotive standard. The I3T80 technology contains various types of DMOS transistors in the range between 20 to 80V. A set of bipolars, a high voltage floating diode, a large array of passive components, floating logic up to 80V and 4kV HBM compatible ESD protection structures are available. In addition, embedded flash memory is offered at the expense of three extra masks.

For more information on the 42V battery automotive standard, visit AMI Semiconductor's Web site.

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