Medhat Karam, Wael Fikry, and Hani Ragai, Hisham Haddara,
Ain-Shams University and Mentor Graphics

The implementation of all components of Hot-Carrier reliability simulation in Eldo is described in this paper. A repetitive simulation scheme has been adopted to ensure accurate prediction of the circuit-level degradation process under dynamic operating conditions. Two approaches for modeling the degraded MOS transistor have been implemented, namely, the parameter fitting method and a newly proposed (Id model. The new model overcomes the discontinuity and subthreshold invalidity of the existing models. The model has proven high accuracy for two well known foundries on their 0.25um technologies. Simulation results on some direct applications like inverters and ring oscillator circuits are also presented in this paper.