|
Overview:
With the launch of Intel's P35 chipsets, and growing list of validated devices, DDR3 SDRAMs have become a reality. While memory vendors began sampling DDR3 SDRAM chips this summer, high-volume sales are not expected until mid-2009 when DDR3 is expected to reach price parity with DDR2.
However, to reach sufficient volume, two major factors must be met: cost and performance. DDR3 SDRAM devices announced so far have performance up to 1,066 MHz. This is comparable to the performance of high-end DDR2 SDRAM devices currently available. The market expects more than DDR2 performance to justify a switch to DDR3 SDRAMs. Due to the price premium of 2-Gbit over 1-Gbit DDR3, the penetration of 2-Gbit DDR3 is expected to first begin in the server market and later extend to general PC users.
Semiconductor Insights has recently performed comparative analyses on two of the leading 1-Gbit DDR3 SDRAM devices from Samsung and Micron. These devices are manufactured in comparable process nodes: Samsung using an 80-nm lithography and Micron using a 78-nm lithography.
Use this OnDemand seminar to find out:
- How the internal structures of the devices compare.
- How those structures affect their relative performance.
- How their relative die-size efficiencies were achieved-and which ones stand out.
- What the future holds for DDR3 memory.
- And much more!
Who should attend:
Designers of advanced systems requiring high memory density, as well as chip designers looking for the latest in memory process technology.
Presenter:
Young Choi
Young Choi is the product technology manager for memory at Semiconductor Insights, Ottawa, Canada.
|
