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Reticle Enhancement Verification for the 65nm and 45nm Node

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Mentor Graphics Technical Library
March 29, 2006
 

Kevin Lucas, Kyle Patterson, Robert Boone and Corinne Miramond, Freescale Semiconductor
Amandine Borjon and Jerome Belledent, ST Microelectronics

In previous work we performed a theoretical analysis of OPC & RET verification requirements for the 65nm and 45nm device generations and drew conclusions for the ideal verification strategy. In this paper, we extend the previous work to include actual observed verification issues and experimental results. We analyze the historical experimental issues with regard to cause, impact and optimum verification detection strategy. The results of this experimental analysis are compared to the theoretical results, with differences and agreement noted. Finally, we use theoretical and experimental results to propose an optimized RET verification strategy to meet the user requirements of 45nm development and the differing requirements of 65nm volume production.

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Freescale Semiconductor
Mentor Graphics
STMicroelectronics
   

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