New Wide Band Gap High-Power Semiconductor Measurement Techniques
Wide band gap power devices (such as those constructed from gallium nitride or silicon carbide) offer significant benefits over power devices fabricated from silicon. The key benefits of wide band gap power devices include: higher operating temperature, higher operating voltage, higher operating frequencies and lower power loss (lower on resistance). These features translate into the following advantages for solid-state power circuit design:
- Improved conversion efficiency due to reduced switching and conduction loss, higher operating voltages and currents, and higher operating frequencies.
- Lighter weight due to higher permissible operating temperatures and reductions in the required cooling system size.
- Measurement of currents of >100 A
- Measurement of voltages of >3,000 V
- Accurate sub-milliohm on resistance measurement
- Quantitative gallium nitride current collapse measurement
- Junction capacitance measurement at thousands of volts of DC bias
Who should attend:
Engineers, scientists and researchers involved with the characterization and measurement of high-power semiconductor devices (especially wide band gap materials such as gallium nitride and silicon carbide) would benefit from attending this webcast.
Alan Wadsworth, Market Development Manager, Agilent
Alan Wadsworth is the North and South American Market Development Manager for Agilent's semiconductor test division. Alan holds bachelors and masters degrees in electrical engineering from the Massachusetts Institute of Technology and an MBA from Santa Clara University. Alan has over 25 years of experience in the semiconductor industry in both design and test.