High-voltage Power MOSFETs vs. IGBTs: A closer look

Overview:
There are two popular and often times competing high-voltage power devices available to designers. These are the high-voltage power MOSFET and IGBT. Each device has its strengths and shortcomings, which are very application and operating condition dependent. Specifically, the application area of a motor inverter often needs careful consideration regarding the power device to be selected. This is where subtleties such as the recovery performance of the reverse diode often play a key role. The intent of this webinar is to help provide some insights into these devices and help guide designers to a suitable power device for their given motor inverter design.

What attendees will learn:

• An understanding of the differences between a high-voltage MOSFET and IGBT from a device structure, operational principle, characteristics, and application perspectives.
• How to estimate power device losses in a motor inverter application.
• How best to select a power device for a small motor inverter application
  (100 W to 5 kW range)

Duration: 45 minutes + Q&A

Who should attend:
Engineers working on power supply and motor drive designs.

Prerequisites:
Interest in high-voltage power devices and the motor inverter application area.

Satyavrat has been employed at Renesas America in the area of product marketing of high-voltage Analog and Power Devices for over a year. He has close to 15 years of experience in the field of electrical power systems, motor drives, and power electronics and has been involved in past projects such as microprocessor control of stepper motors and sensorless control of high-speed PMSM motors. He has his BSEE from the University of Mumbai, his MSEE from the University of Houston and is a past member of IEEE.