Silicon One SoC Sign-off Solution: Tekton, QCP and Quartz DRC
Full-chip sign-off validation is a critical challenge for system-on-chip (SoC) design teams. With design sizes often exceeding 50 million gates, and numerous operating modes and corners to validate, the number of engineering change order (ECO) cycles has increased exponentially. This has had an adverse affect on design schedules and time to market.
Magma's Silicon One SoC Sign-off technology, including QCP™ for parasitic extraction, Tekton™ for delay calculation and static timing analysis, and Quartz™ DRC/LVS, provides a fast, accurate, high capacity solution that speeds SoC timing closure and validation.
View this webinar now to learn how Magma's Silicon One SoC sign-off technologies enhance the overall flow and integrate into a complete sign-off solution. Here are just some of the advantages that will be covered in the webinar:
- Multi-threaded performance and scalability that consistently out-performs traditional tools.
- Unique multi-mode, multi-corner analysis and extraction capabilities that significantly reduce hardware resources through single server, concurrent operation.
- Integration with the place-and-route environment that eliminates miscorrelation between implementation and sign-off timing environments and enhances LVS/DRC closure.
Ruben Molina, Senior Director, Digital Sign-off Business Unit, Magma Design Automation, Inc.
Ruben joined Magma in July of 2010 and is currently responsible for product marketing and business development of Magma's digital sign-off products with a special focus on static timing analysis tools.
Ruben has over 20 years experience in electronic design and design automation. Prior to joining Magma, he held management positions in design methodology, applications, and technical marketing for LSI Logic and Extreme DA. He also spent several years as an IC designer for Hughes Aircraft, Radar Systems Group. Ruben holds a BS in Engineering and MSEE from California State University, Los Angeles. He is the co-author of seven U.S. patents.