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Modeling Semiconductor Device Variability with TCAD Sentaurus

Original Air Date: Jun 1, 2011 | Duration: 60 min Webinar
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Overview
As transistor critical dimensions continue to shrink, process variations have a growing impact on device and circuit variability. The process variation stems from geometric and doping statistical fluctuations which can be well modeled with TCAD. This webinar presents a methodology for variability analysis at the technology level combining 3D process simulation with a device simulation technique known as Impedance Field Method (IFM). IFM is a proven numerical method previously used for noise analysis and now extended for variability analysis. After discussing the physical models underlying IFM, various examples illustrate its application to state-of-the-art devices. 

The presentation will be followed by a Q&A session where the audience will have the opportunity to get their questions answered by the presenter. 

Who should attend: Technology Development Engineers, Reliability Engineers, Process Engineers, Process Integration Engineers and Managers. 

Speaker: 
Karim El Sayed
 
Director of TCAD R&D 
Synopsys 
Karim El Sayed received his Dipl. Ing. and Ph.D. degree in physics from the University of Frankfurt, Frankfurt, Germany, in 1990 and 1994, respectively. From 1994 to 1995 he worked as a Post-Doctoral Fellow at the Micro- and Nanotechnology Research Center of the Danish Technical University, Lyngby, Denmark. From 1996 to 1998 he worked as a Postdoctoral Fellow, in the Physics Department of the University of Florida, Gainesville, before joining Synopsys Inc., Mountain View, CA (formerly Integrated Systems Engineering, Inc., San Jose, CA). Dr. El Sayed leads a team of TCAD application engineers focused on cutting-edge application development. 

Moderator: 
Sudarshan Krishnamoorthy
 
TCAD Technical Marketing Manager 
Synopsys

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