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FRAM Reaches Highest Capacity to Date

Authored on: Jun 5, 2007 by Mike Alwais

Technical Paper

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Bridging the gap between the traditional mainstream semiconductor memory technologies of volatile RAM and non-volatile ROM, ferroelectric random access memory (FRAM) is continuing to grow in popularity among design engineers as the nonvolatile memory of choice. This paper explains how FRAM technology works and how TI's 130-nm process advances the technology, allowing FRAM to surpass the 1-megabit capacity limit.

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