datasheets.com EBN.com EDN.com EETimes.com Embedded.com PlanetAnalog.com TechOnline.com  
Events
UBM Tech
UBM Tech
Welcome Guest Log In | Register

2008 IC Technology Report: DRAM Technology

Authored on: Apr 25, 2008 by Scotten W. Jones

Technical Paper

0 0
More InfoLess Info

Dynamic Random Access Memory (DRAM) has a unique combination of characteristics that have made it the most widely used semiconductor memory in today's market. These traits include the ability to retain stored values as long as they are powered, and full accessibility of any individual cell at any time. Also, DRAM is less expensive than Static Random Access Memory (SRAM) and faster than Flash—this "sweet spot," where cost and speed intersect, led to the adoption of DRAM for main memory in computers and is largely responsible for its popularity.

This DRAM Technology report is one of 22 chapters in the full 2008 IC Technology report. The full report covers introductory material; unit process steps, such as photolithography and ion implant; process integration, including Intel's 45nm Microprocessor flow, as well and DRAM and Flash memory flows; and materials.

To purchase the full report, click here.

Reproduced from the 2008 IC Technology Report. Copyright © 2000-2008 IC Knowledge LLC. All rights reserved. Reproduced by permission of IC Knowledge. Written permission from IC Knowledge is required for all other uses.



Please disable any pop-up blockers for proper viewing of this paper.

0 comments
write a comment

Please Login

You will be redirected to the login page

×

Please Login

You will be redirected to the login page

×

Please Login

You will be redirected to the login page