Identification of Residual Stress State in an RF-MEMS DeviceN
In this investigation, Young's modulus and residual stress state of a freestanding thin membrane are characterized by means of wafer level tests. The membrane is part of an RF MEMS Switch manufactured by Raytheon Systems. The investigation uses a new method that combines nanoin-dentation, a Membrane Deflection Experiment (MDE) and 3D numerical simulations.
Please disable any pop-up blockers for proper viewing of this paper.